AOI ELECTRONICS CO.,LTD.
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History Footstep from our fundation in 1969 up to now.

Corporate information
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History

 
1969 AOI ELECTRONICS CO., LTD. established with Capital of \40,000,000.
Commenced production of Fixed Carbon Film Resistors.
1972 Commenced production of Hybrid Integrated Circuits(HIC)And Transistors.
1973 Established Kanonji Plant.
Commenced production of Monolithic ICs.
Commenced production of Diodes.
Commenced production of LEDs.
1975 Commenced production of Resistor Networks.
1976 Commenced production of Chip Resistors.
Commenced Plating of Chip Resistors.
1977 Capital increased to \130,000,000.
Commenced production of Thermal Print Heads.
1982 Commenced production of Zener Diodes and Leadless Diodes.
1983 Commenced Plating of ICs.
1984 Capital increased to \260,000,000.
1989 Tokyo Sales Office set up in Minami-Aoyama.
1990 Commenced production of Chip on Boards.
1991 Commenced production of Card Modules.
Commenced production of Sensors.
1992 Commenced production of IC Package for Crystal Device.
Commenced production of LEDs' Heads.
1993 Commenced production of R.C. Chips.
1994 Commenced production of Chip Networks.
Certificate of Registration of ISO9002 at Takamatsu Factory.
1995 Commenced production of C-R Networks.
1996 Completed development for Flip Chip Mount Technology.
1997 Capital increased to \466,250,000.
Completed newly construction of Head Office and Takamatsu plant.
Extension of Kanonji Plant.
Tokyo Sales Office moved to "Wold Trading Center Building"at Hamamatsucho.
Completed development for Chip Size Package Technology.
Completed development for leadless IC Package.
1998 Capital increased to \1,557,750,000.
Commenced production of Optical Sensors.
1999 Completed development and commenced production of TPH with High integrated IC chip.
Completed development and commenced production of High precision Resistor-Network.
Certificate of Registration of ISO9001 at Kanonji Factory.
2000 Listed on the Second Section of Tokyo Stock Exchange.
Capital increased to \4,545,500,000.
Certificate of Registration of ISO 14001at Head office・Takamatsu Plant.
2001 The head office and the completion of the Takamatsu factory extension.
Certificate of Registration of ISO 14001at Kanonji Factory.
2002 An ISO 9001 quality system examination registration certificate is shifted to 2000 editions.(the Kanonji production headquarters).
2003 Completed development and commenced production of High Pixel density TPH.
Technical collaboration agreement with Mitsubishi Chemical Corporation lithium polymer battery.
Certificate of Registration of ISO9001:2000,with the transition from ISO9002:1994,at Takamatsu Plant.
Completed development for Micro Metal Tool and Nano-Tweezers(MEMS).
Completed development for Camera Modules.
2004 Commenced production of High-precision & High-density Chip Resistor Networks.
Completed development and commenced production of TPH operation by battery for mobile devices application.
Completed development for Ultra Thin PL package.
2005 An ISO 14001 Enviroment system examination registration certificate is shifted to 2004 editions.(the Kanonji Factory)
Completed development for Large footprint and Thin type lithium polymer battery
Completed development and commenced production of High-density,high power and low-resistance Resistors.
Completed development of anti-impact Resistance Heater.
2006 Completed development of multi-chip stacked package.
Completed development of Power Package.
Completed development of low voltage drive TPH for mobile printer.
Completed development of PL package with Cupper.
Completed development and commenced production of Erase Head.
2007 Completed rebuilding of Kanonji Plant.
Completed development of PL package with Chip on Lead structure.
Completed development of package with coating open sensor for Blu-ray DVD.
Completed development of Ultra thin(0.3mm)IC package.
Completed development of Nano Tweezers with contact detection.
2008 Completed development of stacked PL package.
Completed development of multi-flip Chip package.
Completed development of high-power Attenuator.
2009 Completed development of inclined IC package for gyroscope.
Completed development of miniature(0.8-mm-square) PL package.
Completed development of acceleration sensor.
Completed development of PL package for diode.
Completed development of high performance battery for humanoidrobot.
2010 Completed development of highly durable TPH.
Completed development of flip Chip PL package.
Completed development of large scale battery system for solar panel.
Completed newly Extension of Takamatsu Plant.
2011 Completed development of IR(Infrared radiation) sensor with PL package.
Completed development of package with GOC(Glass On Chip) structure for opto elctronics IC.
Completed development of package with wide cavity type sensor for Blu-ray DVD.
Completed development of PL package for MEMS shock sensor.
Completed development of PL package(0.6x0.3mm) for TVS (transient voltage suppression) diode.
2012 Completed development of a cavity type PL package for opto elctronics IC.
Completed development of package for proximity sensor.
Completed development of IR sensor package for motion sensor.
Completed development of blood flow sensor package for medical application.
Completed development of technology for POP(Package On Package).
Commenced production sercice with BG(Back Grinding) and DC(Dicing) process for GaAs(Gallium Arsenide.)
Completed development of package for current sensor.
2013 Acquired HIGH COMPONENTS AOMORI CO.,LTD as subsidiary compant.
Completed development of package for magnetic sensor.
Completed development of a cavity type package for medical application.
Completed development of TPH for high efficiency printing and high durability.
2014 Completed development of (a hollow type) package for pressure sensor.
Completed development of a cavity type PL package for (UV(Ultraviolet),pressure)sensor.
Completed development of TPH for low electric current consumption.
2015 Completed technology development of visible two-dimensional Fourier spectroscopy unit(Two-dimensional hyperspectral camera).
Completed technology development of near IR Fourier spectrocopy unit(Two-dimensional hyperspectral camera).
Completed development of IGBT module.
Completed development of cavity type package for gas sensor.
Completed development of shield package.
Completed development of package for pen pressure sensor.
Completed development of the high heat radiation wiring board.
2016 Acquired OUME ELECTRONICS CO.,LTD as subsidiary compant.
Completed development of flip-chip package for low on-resistance.
Completed technology development of far IR Fourier spectroscopy unit(Two-dimensional hyperspectral camera).
Certificate of Registration ISO/TS16949 at Takamatsu Plant.
 

head office/Takamatsu Plant 455-1, Kohzai Minamimachi, Takamatsu, Kagawa, 761-8014 Japan TEL (087)882-1131 FAX (087)881-5575
Kanonji Plant 262 Yoshiokacho, Kanonji, KAGAWA, 768-0021, Japan TEL (0875)25-5555 FAX (0875)23-0020
Tokyo Office World Trade Center Bldg-33F, 2-4-1, Hamamatsucho, Minato-ku,105-6133, Japan TEL (03)3431-1112 FAX (03)3431-1366
© 2002 AOI ELECTRONICS.Co.,Ltd.